Vertical light-emitting diode and method for manufacturing the same

ABSTRACT

A vertical light-emitting diode and a method for manufacturing the same are described. In the method for manufacturing the vertical light-emitting diode, a sapphire substrate is provided. An illuminant epitaxial structure is formed on the sapphire substrate. Next, a first conductivity type electrode is formed on a surface of the illuminant epitaxial structure. Then, a local removal step is performed to remove a portion of the sapphire substrate from another surface of the illuminant epitaxial structure and to expose a portion of the other surface of the illuminant epitaxial structure, wherein the other surface is opposite to the surface of the illuminant epitaxial structure. Subsequently, a second conductivity type electrode is formed on the exposed portion of the other surface of the illuminant epitaxial structure, wherein the first conductivity type electrode and the second conductivity type electrode are opposite conductivity types.

RELATED APPLICATIONS

The present application is based on, and claims priority from, TaiwanApplication Serial Number 94131924, filed Sep. 15, 2005, the disclosureof which is hereby incorporated by reference herein in its entirety.

FIELD OF THE INVENTION

The present invention relates to a light-emitting diode and a method formanufacturing the same, and more particularly, to a verticallight-emitting diode with a local removal substrate and method formanufacturing the same.

BACKGROUND OF THE INVENTION

FIGS. 1 a through 1 d are schematic flow diagrams showing the processfor manufacturing a conventional vertical light-emitting diode. Asapphire substrate 100 is first provided. Next, an illuminant epitaxialstructure 102 is formed on a surface of the sapphire substrate 100 by anepitaxial method, such as shown in FIG. 1 a. Typically, the illuminantepitaxial structure 102 is mainly composed of a first conductivity typesemiconductor layer, an active layer and a second conductivity typesemiconductor layer. Because the sapphire substrate 100 is made of anelectrically insulating material, another conductive substrate 104usually has to be provided and the electrically insulating sapphiresubstrate 100 is removed when a vertical connecting electrode structureis fabricated. After the illuminant epitaxial structure 102 iscompleted, the illuminant epitaxial structure 102 is adhered to theconductive substrate 104 by a bonding method, such as shown in FIG. 1 b.

After the illuminant epitaxial structure 102 is bonded to the substrate104, the whole sapphire substrate 100 is removed from the illuminantepitaxial structure 102 by a laser ablation technique, so as to expose asurface of the illuminant epitaxial structure 102, such as shown in FIG.1 c. Then, a first conductivity type electrode 106 and a secondconductivity type electrode 108 are respectively formed on theilluminant epitaxial structure 102 and the substrate 104. Subsequently,a dicing step is performed to form a plurality of light-emitting diodechips 110, such as shown in FIG. 1 d.

However, in the aforementioned process of the light-emitting diode, whenthe laser ablation technique is used to remove the sapphire substrate100, a stress, which is caused by the high temperature or largetemperature difference during the laser treating process, damages thestructure of the light-emitting diode. Moreover, the device quality isdegraded by the excessively large energy transfer induced in theablation process. Therefore, the operation quality and the product yieldof the light-emitting diode are decreased. In addition, the ablationrate of the substrate is very slow, so it takes a long time to ablatethe whole substrate, which increases the process cost and reduces thethroughput. Besides, this process requires bonding the illuminantepitaxial structure to the additional substrate 104, further increasingcost and lowering yield.

SUMMARY OF THE INVENTION

Therefore, one objective of the present invention is to provide a methodfor manufacturing a vertical light-emitting diode by removing a portionof a sapphire substrate after the growth of an epitaxial structure,which can resolve the light-absorbing problem of the substrate. Inaddition, the light can be extracted from the sapphire substrate,thereby enhancing the light extraction efficiency.

Another objective of the present invention is to provide a method formanufacturing a vertical light-emitting diode, which only removes aportion of a sapphire substrate and does not need an additional processof bonding an illuminant structure to another substrate, therebyenhancing the process yield and effectively reducing the productioncost.

Still another objective of the present invention is to provide avertical light-emitting diode, wherein because only a portion of asapphire substrate is ablated by a laser technique, the structure of thelight-emitting diode is not damaged by high temperature, therebyenhancing the operation reliability of the device.

Further another objective of the present invention is to provide avertical light-emitting diode including a metal electrode of highreflectivity, which can increase the light extraction rate of thedevice.

Yet another objective of the present invention is to provide a verticallight-emitting diode having a superior current-spreading effect, whichcan be applied in a light-emitting diode device of large current orlarger power, thereby broadening the applicability.

According to the aforementioned objectives, the present inventionprovides a vertical light-emitting diode comprising the followingcomponents. An illuminant epitaxial structure has a first surface and asecond surface on opposite sides. A first conductivity type electrode isdeposed on the first surface of the illuminant epitaxial structure. Alocal removal sapphire substrate is deposed on a first portion of thesecond surface of the illuminant epitaxial structure and exposes asecond portion of the second surface of the illuminant epitaxialstructure. A second conductivity type electrode is deposed on the secondportion of the second surface of the illuminant epitaxial structure,wherein the first conductivity type electrode and the secondconductivity type electrode are opposite conductivity types.

According to a preferred embodiment of the present invention, thevertical light-emitting diode is a GaN-based light-emitting diode. Thelocal removal sapphire substrate is a laser local removal sapphiresubstrate formed by a laser ablation technique.

According to the aforementioned objectives, the present inventionprovides a method for manufacturing a vertical light-emitting diodecomprising the following steps. A sapphire substrate is provided. Anilluminant epitaxial structure is formed on the sapphire substrate.Next, a first conductivity type electrode is formed on a surface of theilluminant epitaxial structure. Then, a local removal step is performedto remove a portion of the sapphire substrate from another surface ofthe illuminant epitaxial structure and to expose a portion of the othersurface of the illuminant epitaxial structure, wherein the other surfaceis opposite to the surface of the illuminant epitaxial structure and iswhere the first conductivity type electrode is located. Subsequently, asecond conductivity type electrode is formed on the exposed portion ofthe other surface of the illuminant epitaxial structure, wherein thefirst conductivity type electrode and the second conductivity typeelectrode are opposite conductivity types.

According to a preferred embodiment of the present invention, the localremoval step is performed by a laser dicing technique and a laserablation technique, and a material of the first conductivity typeelectrode is a high-reflectivity metal.

By using a laser ablation technique to locally remove the sapphiresubstrate, the light-absorbing problem of the substrate can be resolved,and the light can be extracted from the sapphire substrate, so that thelight extraction effect can be increased. Besides, bonding an additionalsubstrate is not needed, thereby reducing cost and increasing theprocess yield. Furthermore, because only a portion of the sapphiresubstrate is ablated, the structure of the light-emitting diode is notdamaged by high temperature, which can ensure the operation reliabilityof the device, enhance the production yield and decrease the cost.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing aspects and many of the attendant advantages of thisinvention will become more readily appreciated as the same become betterunderstood by reference to the following detailed description, whentaken in conjunction with the accompanying drawings, wherein:

FIGS. 1 a through 1 d are schematic flow diagrams showing the processfor manufacturing a conventional vertical light-emitting diode; and

FIGS. 2 a through 2 e are schematic flow diagrams showing the processfor manufacturing a vertical light-emitting diode in accordance with apreferred embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

The present invention discloses a vertical light-emitting diode and amethod for manufacturing the same by removing a portion of a sapphiresubstrate after an illuminant epitaxial structure is formed, which canenhance the process yield, reduce the process cost, increase the lightextraction effect and enhance the operation reliability of the device.In order to make the illustration of the present invention more explicitand complete, the following description is stated with reference toFIGS. 2 a through 2 e.

FIGS. 2 a through 2 e are schematic flow diagrams showing the processfor manufacturing a vertical light-emitting diode in accordance with apreferred embodiment of the present invention. In the present invention,when a vertical light-emitting diode is manufactured, a sapphiresubstrate 200 is provided. An illuminant epitaxial structure 202 isgrown on a surface of the sapphire substrate 200 by, for example, anepitaxial method. In some examples, the illuminant epitaxial structure202 may comprise a second conductivity type semiconductor layer, anactive layer and a first conductivity type semiconductor layer stackedin sequence. The light-emitting diode of the present invention may be aGaN-based light-emitting diode, and the active layer in the illuminantepitaxial structure is composed of one or more GaN-based materials.Next, a first conductivity type electrode 204 is formed on anothersurface of the illuminant epitaxial structure 202, which is opposite tothe surface where the sapphire substrate 200 located, so as to deposethe first conductivity type electrode 204 on the first conductivity typesemiconductor layer of the illuminant epitaxial structure 202, such asshown in FIG. 2 a. In the present embodiment, a material of the firstconductivity type electrode 204 is preferably metal, and is morepreferably metal of high reflectivity, which can more effectivelyreflect the light emitted by the illuminant epitaxial structure 202. Thesapphire substrate 200, the illuminant epitaxial structure 202 and thefirst conductivity type electrode 204 constitute a light-emitting diodewafer 212, such as shown in FIG. 2 c.

Reference is made to FIGS. 2 b and 2 c, wherein after the firstconductivity type electrode 204 is formed, the light-emitting diodewafer 212 is flipped to make the sapphire substrate 200 be the dicedsurface, and a first dicing procedure 214 is performed on thelight-emitting diode wafer 212. The first dicing procedure 214 isperformed along the scribing lines of the light-emitting diode wafer 212by, for example, a laser dicing technique, so as to divide thelight-emitting diode wafer 212 into a plurality of light-emitting diodechips 218, such as shown in FIG. 2 c. Then, a local removal procedure isperformed. A second dicing procedure 216 is performed by, for example, alaser dicing technique. By the first dicing procedure 214 and the seconddicing procedure 216, portions 206 desired to be removed and portions208 desired to be kept in the sapphire substrate 200 are cut apart, suchas shown in FIGS. 2 b and 2 c. After the first dicing procedure 214 andthe second dicing procedure 216 are completed, because the portions 206desired to be removed in the sapphire substrate 200 have been cut apart,a local ablation procedure 220 is performed by, for example, a laserablation technique, so as to ablate the portions 206 of the sapphiresubstrate 200 in the light-emitting diode chips 218 from the illuminantepitaxial structure 202 and to expose the underlying surface of theilluminant epitaxial structure 202, such as shown in FIG. 2 d.

It is noteworthy that in the present embodiment, although the procedureof dicing the light-emitting diode wafer along the scribing lines toform the light-emitting diode chips is performed first, and the dicingprocedure of the portions desired to be removed of the sapphiresubstrate is performed thereafter; in the present invention, the dicingprocedure of the portions desired to be removed of the sapphiresubstrate may be performed first, and the dicing procedure of dividingthe light-emitting diode wafer into many light-emitting diode chips maybe performed thereafter. Accordingly, the present invention is notlimited to the present embodiment.

Because only a portion of the sapphire substrate 200, not the wholesapphire substrate 200, is removed in the present invention, thetreatment time is reduced, the degradation of operation performance ofthe device is greatly decreased, the production yield is effectivelyenhanced, the quantity of output is increased, and the fabrication costis lowered. In addition, the sapphire substrate 200 is locally removed,which can resolve the light-absorbing issue of the substrate. Moreover,because a laser technique is used, and only local portions of thesapphire substrate 200 are removed, the invention can prevent theilluminant epitaxial structure 202 from being damaged by the hightemperature produced during the ablation treatment, thereby enhancingthe operation reliability of the device.

After the sapphire substrate 200 is locally removed, a secondconductivity type electrode 210 is formed on the exposed surface of theilluminant epitaxial structure 202 of each light-emitting diode chip218, i.e. the surface of the second conductivity type semiconductorlayer of the illuminant epitaxial structure 202, so as to complete thefabrication of the light-emitting diode chips 218, such as shown in FIG.2 e. A material of the second conductivity type electrode 210 ispreferably metal, and is more preferably metal of high reflectivity. Inthe present invention, the first conductivity type and the secondconductivity type are opposite conductivity types. That is, when thefirst conductivity type is P-type, the second conductivity type isN-type; conversely, when the first conductivity type is N-type, thesecond conductivity type is P-type. In the light-emitting diode chip218, the first conductivity type electrode 204 and the secondconductivity type electrode 210 are respectively on the oppositesurfaces of the illuminant epitaxial structure 202, and thelight-emitting diode chip 218 is a vertical light-emitting diode.

One feature of the present invention is that only by locally removingthe insulating sapphire substrate to expose a portion of the conductiveilluminant epitaxial structure, the electrode can be deposed on theexposed surface of the illuminant epitaxial structure to form a verticallight-emitting diode structure. Therefore, with the application of thepresent invention, time is saved by not needing to ablate the wholesubstrate, and an additional substrate is not required, which eliminatesthe procedure of bonding the illuminant epitaxial structure to theadditional substrate. Accordingly, the energy transfer produced in theablation procedure is reduced, thereby decreasing the negative effect tothe device quality, saving the fabrication cost, increasing the quantityof output and enhancing the yield. The light emitted by the illuminantepitaxial structure can be mainly extracted from the sapphire substrate,so the light-emitting diode of the present invention has an excellentlight extraction effect. Additionally, the light-emitting diode of thepresent invention has a vertical transmission structure, so thecurrent-spreading effect is superior, which can be applied in thelight-emitting diode of large power or large current.

According to the aforementioned description, one advantage of the methodfor manufacturing a light-emitting diode of the present invention isthat after the illuminant epitaxial structure is grown, the sapphiresubstrate is locally removed, so that the light-absorbing problem of thesubstrate is reduced, and the light can be extracted from the sapphiresubstrate, thereby greatly enhancing the light extraction effect of thedevice.

According to the aforementioned description, another advantage of themethod for manufacturing a light-emitting diode of the present inventionis that because only by locally removing the sapphire substrate, theadditional procedure of bonding the illuminant epitaxial structure toanother substrate is eliminated, the fabrication cost is effectivelyreduced, and the object of enhancing the process yield is obtained.

According to the aforementioned description, still another advantage ofthe light-emitting diode of the present invention is that because only aportion of the sapphire substrate is ablated by a laser technique, thetime spent to ablate the substrate is greatly reduced, and the structureof the light-emitting diode is not damaged by high temperature or theexcessive energy transfer, thereby enhancing the operation reliabilityof the device.

According to the aforementioned description, yet another advantage ofthe light-emitting diode of the present invention is that because itincludes metal electrodes of high reflectivity, the light extractionrate of the device is superior.

According to the aforementioned description, another further advantageof the light-emitting diode of the present invention is that because itincludes a vertical transmission structure, which has a superiorcurrent-spreading effect, it can be applied in the light-emitting diodeof large power or large current and has wide applicability.

As is understood by a person skilled in the art, the foregoing preferredembodiments of the present invention are illustrated of the presentinvention rather than limiting of the present invention. It is intendedto cover various modifications and similar arrangements included withinthe spirit and scope of the appended claims, the scope of which shouldbe accorded the broadest interpretation so as to encompass all suchmodifications and similar structure.

1. A vertical light-emitting diode, comprising: an illuminant epitaxialstructure having a first surface and a second surface on opposite sides;a first conductivity type electrode deposed on the first surface of theilluminant epitaxial structure; a local removal sapphire substratedeposed on a first portion of the second surface of the illuminantepitaxial structure and exposing a second portion of the second surfaceof the illuminant epitaxial structure; and a second conductivity typeelectrode deposed on the second portion of the second surface of theilluminant epitaxial structure, wherein the first conductivity typeelectrode and the second conductivity type electrode are oppositeconductivity types.
 2. The vertical light-emitting diode according toclaim 1, wherein the vertical light-emitting diode is a GaN-basedlight-emitting diode.
 3. The vertical light-emitting diode according toclaim 1, wherein the local removal sapphire substrate is a laser localremoval sapphire substrate.
 4. The vertical light-emitting diodeaccording to claim 1, wherein the first conductivity type electrode andthe second conductivity type electrode are metal electrodes.
 5. Thevertical light-emitting diode according to claim 4, wherein a materialof the metal electrodes is a high-reflectivity metal.
 6. The verticallight-emitting diode according to claim 1, wherein the firstconductivity type electrode is P-type, and the second conductivity typeelectrode is N-type.
 7. The vertical light-emitting diode according toclaim 1, wherein the first conductivity type electrode is N-type, andthe second conductivity type electrode is P-type.
 8. A method formanufacturing a vertical light-emitting diode, comprising: providing asapphire substrate; forming an illuminant epitaxial structure on thesapphire substrate; forming a first conductivity type electrode on asurface of the illuminant epitaxial structure; performing a localremoval step to remove a portion of the sapphire substrate from anothersurface of the illuminant epitaxial structure and to expose a portion ofthe other surface of the illuminant epitaxial structure, wherein theother surface is opposite to the surface of the illuminant epitaxialstructure; and forming a second conductivity type electrode on theexposed portion of the other surface of the illuminant epitaxialstructure, wherein the first conductivity type electrode and the secondconductivity type electrode are opposite conductivity types.
 9. Themethod for manufacturing a vertical light-emitting diode according toclaim 8, wherein the vertical light-emitting diode is a GaN-basedlight-emitting diode.
 10. The method for manufacturing a verticallight-emitting diode according to claim 8, wherein the local removalstep comprises using a laser dicing technique and a laser ablationtechnique.
 11. The method for manufacturing a vertical light-emittingdiode according to claim 8, wherein the first conductivity typeelectrode and the second conductivity type electrode are metalelectrodes.
 12. The method for manufacturing a vertical light-emittingdiode according to claim 11, wherein a material of the firstconductivity type electrode and the second conductivity type electrodeis a high-reflectivity metal.
 13. A method for manufacturing a verticallight-emitting diode, comprising: providing a sapphire substrate,wherein the sapphire substrate is preset with a plurality of scribinglines; forming an illuminant epitaxial structure on the sapphiresubstrate; forming a first conductivity type electrode layer on asurface of the illuminant epitaxial structure; performing a first dicingstep along the scribing lines to divide a light-emitting diode wafer,which is composed of the sapphire substrate, the illuminant epitaxialstructure and the first conductivity type electrode layer, into aplurality of light-emitting diode chips; performing a local removal stepto remove a portion of the sapphire substrate from another surface ofthe illuminant epitaxial structure and to expose a portion of the othersurface of the illuminant epitaxial structure in each of thelight-emitting diode chips, wherein the other surface and the surface ofthe illuminant epitaxial structure are on opposite sides; and forming asecond conductivity type electrode layer on the exposed portion of theother surface of the illuminant epitaxial structure in each of thelight-emitting diode chips, wherein the first conductivity typeelectrode layer and the second conductivity type electrode layer areopposite conductivity types.
 14. The method for manufacturing a verticallight-emitting diode according to claim 13, wherein the verticallight-emitting diode chips are a plurality of GaN-based light-emittingdiode chips.
 15. The method for manufacturing a vertical light-emittingdiode according to claim 13, wherein the first dicing step comprises alaser dicing technique.
 16. The method for manufacturing a verticallight-emitting diode according to claim 13, wherein the local removalstep comprises: performing a second dicing step to scribe the portion ofthe sapphire substrate; and performing an ablation step to ablate theportion of the sapphire substrate from the other surface of theilluminant epitaxial structure.
 17. The method for manufacturing avertical light-emitting diode according to claim 16, wherein the seconddicing step comprises a laser dicing technique.
 18. The method formanufacturing a vertical light-emitting diode according to claim 16,wherein the ablation step comprises a laser ablation technique.
 19. Themethod for manufacturing a vertical light-emitting diode according toclaim 13, wherein the first conductivity type electrode layer and thesecond conductivity type electrode layer are metal electrode layers. 20.The vertical light-emitting diode according to claim 19, wherein amaterial of the first conductivity type electrode layer and the secondconductivity type electrode layer is a high-reflectivity metal.